Prof. Muhammad Ashraful Alam
M. Ashraful Alam has been graduated from BUET in 1988. He went to the Clarkson University, Postdam, New York in order to achieve a master of science degree in electrical engineering. He has achieved a Ph.D. from Purdue University in 1995.
His area of interest are theory, simulation, characterization, and compact modeling of semiconductor electronic, optoelectronic, and bio-electronic devices. We always look for system-level technological bottlenecks as new research topics and try to identify those problems whose solutions will illuminate the deeper physical principles involved and establish the limits of the technology for the particular system-level applications.
Currently we are working on four research topics that reflect our vision regarding continued evolution of semiconductor industry over the next 20-30 years. These topics are:
(1) Reliability physics of MOSFETs for microelectronic applications,
(2) Possibility of novel DRAMs cells as memory elements beyond ITRS roadmap,
(3) performance limits Nano-composite thin-films for macroelectronic applications (flexible, perhaps printable, large-area electronics), and
(4) functionalized nano-bio sensor arrays for bio-medical and electro-chemical applications.